標題: Characterization and reliability of low dielectric constant fluorosilicate glass and silicon rich oxide process for deep sub-micron device application
作者: Cheng, YL
Wang, YL
Liu, CW
Wu, YL
Lo, KY
Liu, CP
Lan, JK
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: high density plasma (HDP);fluorosilicate glass (FSG);reliability;gap fill;capacitance;via resistance
公開日期: 1-Nov-2001
摘要: Fluorosilicate Glass (FSG) with low dielectric constant currently has been replaced as an alternative to SiO2 for device speed improvement. However, several integration aspects, such as Fluorine (F) distribution, F thermal stability, gap fill capability, capacitance reduction and via resistance of FSG prepared by the high density plasma (HDP) chemical vapor deposition (CVD) method are of concern for sub-0.18-mum devices. In this study, HDP-FSG films show different F concentrations at different locations on an 8-inch wafer. In addition, the FSG film shows poor thermal stability and F diffuses out of the film after high temperature annealing and the pressure cook test (PCT). However, the thermal stability of FSG film can be improved by capping with an oxide layer. The results indicate that silicon rich oxide (SRO) has a better effect at blocking the F diffusion out of FSG films at high temperature than plasma enhanced oxide (PE-OX). For the gap fill capability, HDP-FSG can fill all 0.23-mum gaps and some of the 0.21-mum gaps with an aspect ratio <3.8 but not the 0.19-mum gaps. A 8000 Angstrom HDP-FSG film with 600 Angstrom USG liner and 2000 Angstrom cap layer shows approximately 7.5 to 7.7% capacitance reduction on 0.23/0.23-mum gaps when compared with USG (undoped silicate glass). In addition, FSG has a larger capacitance reduction on the wider metal lines than the thinner metal lines at the same gap size due to a capacitance fringe effect. The via resistance for 0.26 mum unlanded via (which allow minor photo mis-alignment) of HDP-FSG film is also similar to that of USG. (C) 2001 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0040-6090(01)01314-1
http://hdl.handle.net/11536/29279
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(01)01314-1
期刊: THIN SOLID FILMS
Volume: 398
Issue: 
起始頁: 533
結束頁: 538
Appears in Collections:Conferences Paper


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