標題: Growth competition between crystalline silicon carbon nitrides and silicon nitrides deposited on Si wafer by MPCVD
作者: Wu, JY
Kuo, CT
Yang, PJ
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: nitrides;thin films;plasma-assisted CVD;electron microscopy;ESCA
公開日期: 1-Nov-2001
摘要: The Si-C-N films were synthesized on Si wafer by microwave plasma chemical vapor deposition with CH4, N-2, 0.0-8.3 vol.% H-2 and the additional Si chips, as the sources. The growth competition on Si wafer between crystalline ternary Si-C-N and binary silicon nitrides was examined. Based merely on the results of ESCA, XRD and SEM analyses on the film surface, it might often give false impression of forming ternary silicon carbon nitride crystalline films, as reported in the literature, though their volume fractions of H-2 were from 35 to 77%. One of the possible reasons for a false impression is due to the fact that carbon often settles on the deposited films during cooling period. The further examinations on the cross-section of the films by TEM + EDS + ED, and on the film surface by FTIR and Raman spectroscopy clarify that the films essentially consist of similar to2 mum. binary silicon nitride crystals on top of similar to 100 nm ternary Si-C-N crystallites. This is in agreement with the ESCA depth profile examinations and the substrate scratching experiment by Si3N4 powders, which greatly enhance nucleation rate of binary silicon nitride crystals. Under a higher temperature and a longer deposition time, growth competition between crystalline Si-C-N and silicon nitrides will generally result in forming a film covered with silicon nitrides. The crystal structure of the silicon nitrides on the films is much close to alpha -Si3N4 than beta -Si3N4 and tetragonal Si3N4 type structures, but silicon content is higher. (C) 2001 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0254-0584(01)00446-1
http://hdl.handle.net/11536/29263
ISSN: 0254-0584
DOI: 10.1016/S0254-0584(01)00446-1
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 72
Issue: 2
起始頁: 245
結束頁: 250
Appears in Collections:Conferences Paper


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