標題: Properties of Si-C-N films prepared on Si substrate using cobalt interfacial layers
作者: Chang, HL
Kuo, CT
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: nitrides;plasma assisted CVD;X-ray photo-emission spectroscopy;electron microscopy
公開日期: 1-Nov-2001
摘要: A microwave plasma chemical vapor deposition (MPCVD) process was successfully used to synthesize Si-C-N films. The film properties were tuned by deposition parameters and engineering interfacial Co layers on Si substrates. The films were deposited by using CH4, N-2, and additional solid Si columns as raw material sources. The films were characterized by scanning electron microscopy (SEM) for film morphologies, X-ray photo-emission spectroscopy (XPS) and cathodoluminescence (CL) spectroscopy for bonding structure and band gap analyses. The results show that the application of Co interlayer can have the following effects: (1) it can change film morphology from (100) preferred orientation to become pyramidal structure, and the band gap from 2.93 to 4.00 eV; (2) it may possess the additional Si(2p)-Si bonding in the films. By adding additional Si source, the atomic ratio of Si:C:N can change significantly with the decrease in carbon content of films, the film structure may vary from amorphous to crystalline and possess additional C(1s)=N bonding (or N(1s)=C bonding). In summary, the composition, morphology, bonding and crystal structures of Si-C-N films have been successfully demonstrated to be manipulated through applications of Co interlayer and additional Si source. (C) 2001 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0254-0584(01)00444-8
http://hdl.handle.net/11536/29262
ISSN: 0254-0584
DOI: 10.1016/S0254-0584(01)00444-8
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 72
Issue: 2
起始頁: 236
結束頁: 239
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000171822100029.pdf