標題: Electronic properties of phosphorus-doped triode-type diamond field emission arrays
作者: Chen, CF
Tsai, CL
Lin, CL
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: field emission;SEM;CVD
公開日期: 1-Nov-2001
摘要: In this work, we present a novel scheme that involves a new fabrication process of gate structure metal-insulator-semiconductor (MIS) diode using IC technology. We use a bias-assisted microwave plasma chemical vapor deposition (BAMPCVD) system to synthesize P-doped and B-doped diamond. Based on our experimental results, it showed dendrite-like diamond with non-doped and nanotube-like diamond with B- or P- doping. Doping phosphorus or boron can enhance its electric characteristic by reducing the turn-on voltage and enhancing the emission current density. The turn-on voltage of non-doped, B-doped and P-doped is 15, 8 and 5 V, respectively. The field emission current (I-a) of non-doped, B-doped and P-doped is 4 muA (at 45 V), 76 muA (at 77 V) and 322 muA (at 120 V), respectively. (C) 2001 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0254-0584(01)00438-2
http://hdl.handle.net/11536/29260
ISSN: 0254-0584
DOI: 10.1016/S0254-0584(01)00438-2
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 72
Issue: 2
起始頁: 210
結束頁: 213
Appears in Collections:Conferences Paper


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