標題: Diamond growth onCoSi(2)/Si by bias-enhanced microwave plasma chemical vapor deposition method
作者: Chen, MR
Chang, L
Chang, DF
Chen, HG
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: plasma-assisted CVD;electron microscopy;diamond;nucleation
公開日期: 1-Nov-2001
摘要: Diamond was grown on polycrystalline CoSi2/Si substrates by bias-enhanced microwave plasma chemical vapor deposition. Both of the positive and negative biasing effects were investigated by microstructural characterization. It has been found that nucleation density can reach similar to 10(9) cm(-2) with positive biasing, much higher than with negative biasing. Cross-sectional transmission electron microscopy shows that diamond deposited by positive biasing grows on a relatively smooth CoSi2 surface, while the etching effect of ion bombardment during negative biasing results in a rough CoSi2 surface. The diamond morphology obtained with negative bias has a flat surface with a strong (1 0 0) texture. (C) 2001 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0254-0584(01)00430-8
http://hdl.handle.net/11536/29259
ISSN: 0254-0584
DOI: 10.1016/S0254-0584(01)00430-8
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 72
Issue: 2
起始頁: 172
結束頁: 175
Appears in Collections:Conferences Paper


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