標題: Observations of segregation of Al in AlGaN alloys
作者: Chang, L
Lai, SK
Chen, FR
Kai, JJ
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 23-十一月-2001
摘要: Transmission electron microscopy has been used to characterize Al segregation in Al0.1Ga0.9N and Al0.3Ga0.7N alloys grown by metal organic chemical vapor deposition on 6H-SiC. It has been found that an interlayer of AlGaN alloy with much higher Al content was formed at first, followed by normal growth of nominal composition of AlGaN alloy. In Al0.1Ga0.9N and Al0.3Ga0.7N films. dislocation lines were also found to have more Al segregated than those regions free of dislocations in the matrix. Furthermore, it shows that more Al atoms segregate to an edge dislocation than to a screw one.
URI: http://hdl.handle.net/11536/29243
http://dx.doi.org/10.1002/1521-396X(200112)188:2<811
ISSN: 0031-8965
DOI: 10.1002/1521-396X(200112)188:2<811
期刊: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
Volume: 188
Issue: 2
起始頁: 811
結束頁: 814
顯示於類別:會議論文


文件中的檔案:

  1. 000172779700071.pdf