標題: Deep hole traps created by gamma-ray irradiation of GaInP
作者: Sung, WJ
Liu, TY
Yang, SL
Huang, KF
Tseng, TY
Chou, FI
Wei, YY
電子物理學系
Department of Electrophysics
關鍵字: GaInP;gamma-ray;irradiation;defect;trap;deep level;DLTS
公開日期: 1-Dec-2001
摘要: Deep hole traps, created by gamma-ray irradiation of Al/GaInP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Two distinct deep hole traps, A and B, were observed in the irradiated GaInP samples, According to the analysis of trap concentration in various samples, the trap A is verified as a bulk defect located at 0.29 eV above the valance band. Meanwhile, the trap B is an interface state originated from the junctions of Al/Mg-doped GaInP contacts.
URI: http://hdl.handle.net/11536/29232
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 40
Issue: 12
起始頁: 6807
結束頁: 6808
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