標題: NOVEL TECHNIQUE FOR SIO2 FORMED BY LIQUID-PHASE DEPOSITION FOR LOW-TEMPERATURE PROCESSED POLYSILICON TFT
作者: YEH, CF
LIN, SS
CHEN, CL
YANG, YC
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-Aug-1993
摘要: A novel technique for SiO2 formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD-SiO2 film with a lower P-etch rate shows its dense structure. LPD-SiO2 also exhibits good electrical characteristics. LTP poly-Si TFT's with LPD-SiO2, as gate insulator have been fabricated and investigated. Their characteristics exhibit sufficient performance for pixel transistor in liquid crystal display (LCD).
URI: http://dx.doi.org/10.1109/55.225593
http://hdl.handle.net/11536/2923
ISSN: 0741-3106
DOI: 10.1109/55.225593
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 14
Issue: 8
起始頁: 403
結束頁: 405
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