標題: TUNNEL OXIDE PREPARED BY THERMAL-OXIDATION OF THIN POLYSILICON FILM ON SILICON (TOPS)
作者: WU, SL
LEE, CL
LEI, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-八月-1993
摘要: This letter presents a textured tunnel oxide, TOPS, prepared by thermally oxidizing a thin polysilicon film on a Si substrate. Due to the rapid diffusion of oxygen through the grain boundaries of the thin polysilicon into Si substrate and the enhanced oxidation rate at the grain boundaries, a textured Si/SiO2 interface is obtained. The textured interface results in the localized high fields and enhances electron injection into TOPS. The TOPS exhibits a higher electron injection efficiency, a better immunity to the electron trapping and the interface state generation under the high-field operation, and a higher asymmetric injection polarity as compared to the normal oxide.
URI: http://dx.doi.org/10.1109/55.225585
http://hdl.handle.net/11536/2922
ISSN: 0741-3106
DOI: 10.1109/55.225585
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 14
Issue: 8
起始頁: 379
結束頁: 381
顯示於類別:期刊論文


文件中的檔案:

  1. A1993LQ00900004.pdf