標題: Characterization of the low temperature dopant activation behavior at NiSi/silicon interface formed by implant into silicide method
作者: Chang, Kow-Ming
Lin, Jian-Hong
Sun, Cheng-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: nickel silicide;implant into silicide;solid phase epitaxial regrowth;rapid thermal anneal
公開日期: 30-Jul-2008
摘要: Process temperature and thermal budget control are very important for high-k dielectric device manufacturing. This work focuses on the characteristics of low temperature activated nickel silicide/silicon (M/S) interface formed by implant into silicide (IIS) method. By combining SIMS, C-V, I-V, and AFM measurements in this work, it provides a clear picture that the high dopant activation ratio can be achieved at low temperature (below 600 degrees C) by IIS method. From SIMS and C-V measurements, high dopant activation behavior is exhibited, and from I-V measurement, the ohmic contact behavior at the M/ S junction is showed. AFM inspection displays that under 2nd RTA 700 degrees C 30 s no agglomeration occurs. These results suggest that IIS method has the potential to integrate with high-k dielectric due to its low process temperature. It gives an alternate for future device integration. (C) 2008 Elsevier B. V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2008.02.136
http://hdl.handle.net/11536/29164
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.02.136
期刊: APPLIED SURFACE SCIENCE
Volume: 254
Issue: 19
起始頁: 6151
結束頁: 6154
Appears in Collections:Conferences Paper


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