標題: The effects of plasma treatment on the thermal stability of HfO(2) thin films
作者: Chang, Kow-Ming
Chen, Bwo-Ning
Huang, Shih-Ming
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: atomic layer deposition (ALD);inductively coupled plasma (ICP);effective oxide thickness (EOT);high-kappa
公開日期: 30-Jul-2008
摘要: The thermal stability of pure HfO(2) thin films is not high enough to withstand thermal processes, such as S/D activation or post-metal annealing, in modern industrial CMOS production. In addition, plasma nitridation technology has been employed for increasing the dielectric constant of silicon dioxide and preventing boron penetration. In this experiment, atomic layer deposition (ALD) technology was used to deposit HfO(2) thin films and inductively coupled plasma (ICP) technology was used to perform plasma nitridation process. The C-V and J-V characteristics of the nitrided samples were observed to estimate the effect of the nitridation process. According to this study, plasma nitridation process would be an effective method to improve the thermal stability of HfO(2) thin films. (C) 2008 Elsevier B. V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2008.02.140
http://hdl.handle.net/11536/29153
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.02.140
期刊: APPLIED SURFACE SCIENCE
Volume: 254
Issue: 19
起始頁: 6116
結束頁: 6118
Appears in Collections:Conferences Paper


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