標題: The effect of ZnS content on the luminescence and electrical properties of ZnO : Zn phosphor
作者: Lin, CH
Chiou, BS
Chang, CH
Lin, JD
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2002
摘要: Zinc oxide phosphors (ZnO : Zn) were prepared by solid state sintering of ZnO powders with ZnS and screen printed onto ITO-coated glass substrate. The effect of ZnS content and sintering temperature on the cathodoluminescence brightness, efficiency and electrical properties of ZnO : Zn were studied. Samples with 5 wt % ZnS and sintered at 1100 degreesC exhibit the highest brightness and efficiency among all the compositions studied. The brightness of phosphors increases linearly as the accelerating voltage V and/or beam current I increases. While the efficiency decreases initially and then reaches a constant value as V and/or I increases. Both the conductivity sigma and carrier concentration n of the phosphor increase with the increase of ZnS content in the starting composition. Results of Hall measurement suggest that the ZnO : Zn phosphor is an n-type conductor with an electron mobility of around 175cm(2)/V-s. For specimen with 5 wt % ZnS, both sigma and n increases initially with the increase of sintering temperature T, and reaches a constant value at T greater than or equal to 1000 degreesC. The unreacted ZnS found in samples sintered at T < 1000 degreesC explains the temperature dependence of sigma and n. (C) 2002 Kluwer Academic Publishers.
URI: http://hdl.handle.net/11536/29128
http://dx.doi.org/10.1023/A:1013170610826
ISSN: 0957-4522
DOI: 10.1023/A:1013170610826
期刊: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume: 13
Issue: 1
起始頁: 1
結束頁: 5
Appears in Collections:Articles


Files in This Item:

  1. 000172654700001.pdf