標題: Arsenic/phosphorus LDD optimization by taking advantage of phosphorus transient enhanced diffusion for high voltage input/output CMOS devices
作者: Wang, HCH
Wang, CC
Diaz, CH
Liew, BK
Sun, JYC
Wang, TH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: hot carriers;MOS devices;transient enhanced diffusion
公開日期: 1-Jan-2002
摘要: Optimization of a LDD doping profile to enhance hot carrier resistance in 3.3 V input/output CMOS devices has been performed by utilizing phosphorus transient enhanced diffusion (TED). Hot carrier effects in hybrid arsenic/phosphorus LDD nMOSFET's with and without TED are characterized comprehensively. Our result shows that the substrate current in a nMOSFET with phosphorus TED can be substantially reduced as compared to the one without TED. The reason is that the TED effect can yield a more graded n(-) LDD doping profile and thus a smaller lateral electric field. Further improvement of hot carrier reliability can be achieved by optimizing arsenic implant energy. Secondary ion mass spectrometry analysis for TED effect and two-dimensional (2-D) device simulation for electric field
URI: http://dx.doi.org/10.1109/16.974751
http://hdl.handle.net/11536/29085
ISSN: 0018-9383
DOI: 10.1109/16.974751
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 49
Issue: 1
起始頁: 67
結束頁: 71
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