標題: Reduction of nickel-silicided junction leakage by nitrogen ion implantation
作者: Chao, TS
Lee, LY
電子物理學系
Department of Electrophysics
關鍵字: nickel;silicide;junction;leakage;nitrogen
公開日期: 1-Feb-2002
摘要: Nickel-silicided junctions with low leakage by using a nitrogen implantation process are demonstrated in this paper. This technique can significantly improve the leakage problem of Ni-silicided junction. Junctions formed by this method exhibit a very low leakage current density of about 1 x 10(-9) A/cm(2), which represents 2-4 times reduction compared to conventional counterparts.
URI: http://dx.doi.org/10.1143/JJAP.41.L124
http://hdl.handle.net/11536/29027
ISSN: 0021-4922
DOI: 10.1143/JJAP.41.L124
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 41
Issue: 2A
起始頁: L124
結束頁: L126
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