標題: Effects of CH4/SiH4 flow ratio and microwave power on the growth of beta-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 degrees C
作者: Lee, WH
Lin, JC
Lee, C
Cheng, HC
Yew, TR
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: chemical vapor deposition;cyclotron resonance studies;silicon carbide;transmission electron microscopy
公開日期: 22-Feb-2002
摘要: The effects of CH4/SiH4 flow ratio and microwave power on the formation of SiC at 200 degreesC by electron cyclotron resonance chemical vapor deposition is investigated. When the CH4/SiH4 flow ratio is varied from 0.5 to 10, crystalline phase of films vary from polycrystalline silicon to polycrystalline P-SiC and finally to amorphous silicon carbide. However, as the microwave power increases from 300 to 1500 W. the film microstructure changes from polycrystalline Si to amorphous SiC. and finally to polycrystalline beta-SiC. The deposition mechanism which controls the film characteristics is also presented. (C) 2002 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0040-6090(01)01723-0
http://hdl.handle.net/11536/29008
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(01)01723-0
期刊: THIN SOLID FILMS
Volume: 405
Issue: 1-2
起始頁: 17
結束頁: 22
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