標題: Characterization of Si/SiGe heterostructures on Si formed by solid phase reaction
作者: Huang, CH
Chin, A
Chen, WJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Mar-2002
摘要: We have characterized the Si/Si(0.6)Ge(0.4) heterostructure formed by two-step solid-phase reaction. Single crystalline behavior is evidenced by X-ray diffraction. In sharp contrast to conventional strain-relaxed SiGe, an extremely smooth surface close to the Si substrate is measured by cross-sectional transmission electron microscopy and atomic force microscopy. Good material quality is further evidenced from the near identical current-voltage characteristics for thermal oxide grown on Si/Si(0.6)Ge(0.4) and on the Si control sample. (C) 2002 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1450618
http://hdl.handle.net/11536/28978
ISSN: 0013-4651
DOI: 10.1149/1.1450618
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 149
Issue: 3
起始頁: G209
結束頁: G211
Appears in Collections:Articles


Files in This Item:

  1. 000174211100052.pdf