Full metadata record
DC FieldValueLanguage
dc.contributor.authorLin, CWen_US
dc.contributor.authorTseng, CHen_US
dc.contributor.authorChang, TKen_US
dc.contributor.authorLin, CWen_US
dc.contributor.authorWang, WTen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:42:41Z-
dc.date.available2014-12-08T15:42:41Z-
dc.date.issued2002-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.988815en_US
dc.identifier.urihttp://hdl.handle.net/11536/28968-
dc.description.abstractA novel process for fabricating self-aligned gate-overlapped LDD (SAGOLDD) poly-Si thin film transistors (TFTs) was demonstrated. Laser Irradiation for dopant activation was performed from the backside of the quartz wafer. The graded LDD structure was naturally formed under the gate edges due to the lateral diffusion of the dapants during the laser activation. In comparison with the conventional laser-processed self-aligned poly-Si TFTs, the SAGOLDD poly-Si TFTs exhibited lower leakage current, suppressed kink effect, and higher reliability. Moreover, the proposed process was simple and very suitable for low-temperature process.en_US
dc.language.isoen_USen_US
dc.subjectexcimer laseren_US
dc.subjectpoly-Si thin film transistoren_US
dc.subjectself-aligned gate-overlapped LDDen_US
dc.titleA novel laser-processed self-aligned gate-overlapped LDD poly-Si TFTen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.988815en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume23en_US
dc.citation.issue3en_US
dc.citation.spage133en_US
dc.citation.epage135en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000174317300007-
dc.citation.woscount14-
Appears in Collections:Articles


Files in This Item:

  1. 000174317300007.pdf