標題: A novel laser-processed self-aligned gate-overlapped LDD poly-Si TFT
作者: Lin, CW
Tseng, CH
Chang, TK
Lin, CW
Wang, WT
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: excimer laser;poly-Si thin film transistor;self-aligned gate-overlapped LDD
公開日期: 1-三月-2002
摘要: A novel process for fabricating self-aligned gate-overlapped LDD (SAGOLDD) poly-Si thin film transistors (TFTs) was demonstrated. Laser Irradiation for dopant activation was performed from the backside of the quartz wafer. The graded LDD structure was naturally formed under the gate edges due to the lateral diffusion of the dapants during the laser activation. In comparison with the conventional laser-processed self-aligned poly-Si TFTs, the SAGOLDD poly-Si TFTs exhibited lower leakage current, suppressed kink effect, and higher reliability. Moreover, the proposed process was simple and very suitable for low-temperature process.
URI: http://dx.doi.org/10.1109/55.988815
http://hdl.handle.net/11536/28968
ISSN: 0741-3106
DOI: 10.1109/55.988815
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 23
Issue: 3
起始頁: 133
結束頁: 135
顯示於類別:期刊論文


文件中的檔案:

  1. 000174317300007.pdf