標題: Oxygen and nitrogen co-doped GeSbTe thin films for phase-change optical recording
作者: Dimitrov, DZ
Lu, YH
Tseng, MR
Hsu, WC
Shieh, HPD
光電工程學系
Department of Photonics
關鍵字: GeSbTe recording layer;oxygen and nitrogen doping;optical constants;microstructure;crystallization temperatures;phase-change optical disks
公開日期: 1-Mar-2002
摘要: Nitrogen and oxygen co-doped GeSbTe films for phase-change optical recording are investigated. It is found that optical properties of amorphous and crystalline state are similar to that of GeSbTe, crystallization temperature increases and crystalline microstructure is refined which indicate a nucleation rate increases by co-doping. The carrier-to-noise ratio (CNR) and erasability of phase-change optical disks are improved being up to 52 dB and 35 dB, respectively, by using an appropriate co-doping concentration in the recording layer.
URI: http://dx.doi.org/10.1143/JJAP.41.1656
http://hdl.handle.net/11536/28958
ISSN: 0021-4922
DOI: 10.1143/JJAP.41.1656
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 41
Issue: 3B
起始頁: 1656
結束頁: 1659
Appears in Collections:Conferences Paper


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