標題: Real index-guided InGaAlP red lasers with buried tunnel junctions
作者: Lu, TC
Shieh, HM
Wang, SC
光電工程學系
Department of Photonics
公開日期: 18-Mar-2002
摘要: Real index-guided buried ridge InGaAlP 650 nm band lasers with p(+)-n(+) buried tunnel junctions are demonstrated. Located on top of the buried ridges, the tunnel junctions, made of InGaAs/GaAs superlattices with modulation doping, were introduced as the current injection window areas. The large band gap In0.5Al0.5P layers were directly regrown around the ridges using metalorganic chemical vapor deposition to serve as the current blocking layers. Real index optical waveguiding in the lateral direction was also provided by the smaller refractive index of In0.5Al0.5P layers. The lasers showed lower threshold current and higher slope efficiency compared to conventional complex index-guided InGaAlP lasers with GaAs current blocking layers, and had low internal loss of about 5.4 cm(-1). (C) 2002 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1459763
http://hdl.handle.net/11536/28930
ISSN: 0003-6951
DOI: 10.1063/1.1459763
期刊: APPLIED PHYSICS LETTERS
Volume: 80
Issue: 11
起始頁: 1882
結束頁: 1884
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