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dc.contributor.authorLin, GRen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:42:37Z-
dc.date.available2014-12-08T15:42:37Z-
dc.date.issued2002-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.41.L398en_US
dc.identifier.urihttp://hdl.handle.net/11536/28915-
dc.description.abstractThe structural and electrical properties of (002)-oriented high-resistivity ZnO films with luminescent peaks ranging from 3 80 nm to 415 nm grown on SiO2/Si, Si and Coming 7059 glass substrates by radio-frequency magnetron-assisted sputtering are determined. The X-ray diffraction results reveal that the ZnO/glass sample has a narrow normalized intensity of full-width at half maximum (FWHM) compared to other samples. The photoluminescence spectra show that the band-gap energy of the ZnO/glass sample is similar to that of the ZnO bulk standard; however, a smaller band-gap energy of 2.987 eV of the ZnO/SiO2/Si sample due to the defect-induced lattice expansion effect is observed. The ZnO/glass sample has better crystallinity, but exhibits lower contact resistance and sheet resistance. In particular, the metal-semiconductor-metal diode fabricated on the ZnO/Si sample is found to exhibit a relatively larger contact resistance, sheet resistance, and specific contact resistivity of 1.02 x 10(9) Omega, 3.8 x 10(10) Omega/square, and 1.54 x 10(3) Omega-cm(2), respectively.en_US
dc.language.isoen_USen_US
dc.subjectZnOen_US
dc.subjecthigh resistivityen_US
dc.subjecttransmission line methoden_US
dc.subjectcontact resistanceen_US
dc.subjectsheet resistanceen_US
dc.titleComparison of high-resistivity ZnO films sputtered on different substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.41.L398en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume41en_US
dc.citation.issue4Aen_US
dc.citation.spageL398en_US
dc.citation.epageL401en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000176444500011-
dc.citation.woscount2-
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