標題: Comparison of high-resistivity ZnO films sputtered on different substrates
作者: Lin, GR
Wang, SC
光電工程學系
Department of Photonics
關鍵字: ZnO;high resistivity;transmission line method;contact resistance;sheet resistance
公開日期: 1-Apr-2002
摘要: The structural and electrical properties of (002)-oriented high-resistivity ZnO films with luminescent peaks ranging from 3 80 nm to 415 nm grown on SiO2/Si, Si and Coming 7059 glass substrates by radio-frequency magnetron-assisted sputtering are determined. The X-ray diffraction results reveal that the ZnO/glass sample has a narrow normalized intensity of full-width at half maximum (FWHM) compared to other samples. The photoluminescence spectra show that the band-gap energy of the ZnO/glass sample is similar to that of the ZnO bulk standard; however, a smaller band-gap energy of 2.987 eV of the ZnO/SiO2/Si sample due to the defect-induced lattice expansion effect is observed. The ZnO/glass sample has better crystallinity, but exhibits lower contact resistance and sheet resistance. In particular, the metal-semiconductor-metal diode fabricated on the ZnO/Si sample is found to exhibit a relatively larger contact resistance, sheet resistance, and specific contact resistivity of 1.02 x 10(9) Omega, 3.8 x 10(10) Omega/square, and 1.54 x 10(3) Omega-cm(2), respectively.
URI: http://dx.doi.org/10.1143/JJAP.41.L398
http://hdl.handle.net/11536/28915
ISSN: 0021-4922
DOI: 10.1143/JJAP.41.L398
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 41
Issue: 4A
起始頁: L398
結束頁: L401
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