標題: Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage
作者: Lee, DY
Lin, HC
Wang, MF
Tsai, MY
Huang, TY
Wang, TH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: negative-bias-temperature instability (NBTI);PMOS;plasma charging;ashing
公開日期: 1-Apr-2002
摘要: The effects of plasma charging on the negative-bias-temperature instability (NBTI) of p-channel metal-oxide-semiconductor (PMOS) transistors were explored in this work. It is clearly shown that the threshold voltage shift during bias-temperature stressing (BTS) could be enhanced by plasma charging damage. More importantly, we also found that electron trappings are aggravated by plasma charging, even on new devices with large antenna area ratios prior to BTS. Our charge pumping current measurements confirm that the interface-state density is increased for devices with large antennas, both before and after the BTS. This indicates, without ambiguity, that electron trapping is solely responsible for the observed low (in absolute value) threshold voltage in new devices with large antennas. Finally, it is proposed that the NBTI characterization can be used as a sensitive method for characterizing the antenna effects in devices with ultrathin gate oxide, which is particularly attractive in light of the fact that conventional indicators are becoming inadequate as oxide is scaled down.
URI: http://dx.doi.org/10.1143/JJAP.41.2419
http://hdl.handle.net/11536/28913
ISSN: 0021-4922
DOI: 10.1143/JJAP.41.2419
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 41
Issue: 4B
起始頁: 2419
結束頁: 2422
Appears in Collections:Conferences Paper


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