標題: Preventing dielectric damage of low-k organic siloxane by passivation treatment
作者: Chang, TC
Mor, YS
Liu, PT
Tsai, TM
Chen, CW
Mei, YJ
Pan, FM
Wu, WF
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: HOSP;photoresist removal;electrical degradation;stripping;H-2 plasma
公開日期: 1-四月-2002
摘要: An organic SOG, the Hybird-Organic-Siloxane-Polymer (HOSP), has high applicability to ULSI processes, because of the low dielectric constant of about 2.5. However, the HOSP film will be damaged after photoresist removal. The function groups of HOSP will be destroyed by O-2 plasma ashing and chemical wet stripper, which leads to electrical degradation. In order to avoid the issue, H-2 plasma treatment is proposed to prevent HOSP film from photoresisit stripping damage. It is found that leakage current is decreased significantly and the dielectric constant is still maintained at a low k value even after photoresist stripping. Therefore, H-2 plasma treatment is an effective technique to enhance the resistance of HOSP film against photoresist stripping damage. (C) 2002 Elsevier Science B.V. All rights reserved.
URI: http://hdl.handle.net/11536/28881
ISSN: 0167-9317
期刊: MICROELECTRONIC ENGINEERING
Volume: 60
Issue: 3-4
起始頁: 469
結束頁: 475
顯示於類別:期刊論文


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  1. 000175182600016.pdf