標題: Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability
作者: Lin, KC
Shieh, JM
Chang, SC
Dai, BT
Chen, CF
Feng, MS
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-五月-2002
摘要: This work presents a novel leveler with low consumption and low diffusion that achieved defect-free filling in vias as small as 0.1 mum and generated as-deposited films with low resistivities. Experimental results indicate that the additive, 2-aminobenzothiazole (2-ABT), with benzyl and amino (-NH2) functional groups, is a desirable leveler. It produced a highly selective concentration gradient between the opening and the bottom of the feature. This novel leveler, with weaker adsorption, also reduced the consumption during copper electroplating, and eventually deposited a film with a high conductivity. (C) 2002 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.1477422
http://hdl.handle.net/11536/28844
ISSN: 1071-1023
DOI: 10.1116/1.1477422
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 20
Issue: 3
起始頁: 940
結束頁: 945
顯示於類別:期刊論文


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  1. 000176358300031.pdf