標題: Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence
作者: Hsu, Chiung-Chih
Hsu, Ray-Quen
Wu, Yue-Han
Chi, Tung-Wei
Chiang, Chen-Hao
Chen, Jenn-Fang
Chang, Mao-Nan
機械工程學系
材料科學與工程學系
電子物理學系
Department of Mechanical Engineering
Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: Quantum dots;TEM;PL;Molecular beam epitaxy
公開日期: 1-Oct-2008
摘要: Quantum dots (QDs) have great potential in optical fiber communication applications were widely recognized. The structure of molecular beam epitaxy (MBE) grew InAsN QDs were investigated by transmission electron microscopy (TEM) and measured their optical properties by photoluminescence (PL). TEM images show that the InAsN QDs are irregular or oval shaped. Some of the InAsN QDs are observed to have defects, such as dislocations at or near the surface in contrast to InAs QDs, which appear to be defect free. PL results for InAsN QDs showed a red-shifted emission peak. In addition, the InAsN emission peak is broader than InAs QDs, which supports the TEM observation that the size distribution of the InAsN QDs is more random than InAs QDs. The results show that the addition of nitrogen to InAs QDs leads to a decrease in the average size of the QDs, bring changes in the QD's shape, compositional distribution, and optical properties. (C) 2008 Published by Elsevier B.V.
URI: http://dx.doi.org/10.1016/j.ultramic.2008.04.098
http://hdl.handle.net/11536/28831
ISSN: 0304-3991
DOI: 10.1016/j.ultramic.2008.04.098
期刊: ULTRAMICROSCOPY
Volume: 108
Issue: 11
起始頁: 1495
結束頁: 1499
Appears in Collections:Conferences Paper


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