標題: Characterization of thin ZrO2 films deposited using Zr(O '-Pr)(2)(thd)(2) and O-2 on Si(100)
作者: Chen, HW
Landheer, D
Wu, X
Moisa, S
Sproule, GI
Chao, TS
Huang, TY
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-2002
摘要: The properties of ZrO2 films deposited using molecular oxygen and a recently developed precursor, zirconium Zr(O-i-Pr)(2)(thd)(2) have been investigated. The organometallic was dissolved as a 0.15 molar solution in octane and introduced into the deposition chamber using a liquid injection system. The deposition rate was insensitive to molecular oxygen flow but changed with liquid injection rate and was thermally activated in the range 390 degreesC-550 degreesC. Carbon concentrations, <0.1 at.%, the detection limit of the x-ray photoelectron spectroscopy depth profiling measurements, were obtained at the lowest deposition temperatures and deposition rates. High-resolution transmission electron microscopy showed the films to be polycrystalline as deposited, with a zirconium silicate interfacial layer. After proper annealing treatments, an equivalent oxide thickness (EOT) of around 2.3 urn has been achieved for a 5.2 nm thick film, with a leakage current two orders of magnitude lower than that Of SiO2 with the same EOT. Promising capacitance-voltage characteristics were also achieved, but some improvements are required if these films are to be used as a gate insulator. (C) 2002 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.1467358
http://hdl.handle.net/11536/28815
ISSN: 0734-2101
DOI: 10.1116/1.1467358
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
Volume: 20
Issue: 3
起始頁: 1145
結束頁: 1148
顯示於類別:會議論文


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