標題: Anomalous variations of OFF-state leakage current in poly-Si TFT under static stress
作者: Chang, KM
Chung, YH
Lin, GM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: OFF-state leakage current (I-OFF);impact ionization;poly-Si TFT
公開日期: 1-May-2002
摘要: In this letter, we study the anomalous variations of the OFF-state leakage current (I-OFF) in n-channel poly-Si thin-film transistors (TFTs) under static stress. The dominant mechanisms for the anomalous I-OFF can be attributed to 1) I-OFF increases due to channel hot electrons trapping at the gate oxide/channel interface and silicon grain boundaries and 2) I-OFF decreases due to hot holes accumulated/trapped near the channel/bottom oxide interface near the source region. Under the stress of high drain bias, serious impact ionization effect will occur to generate hot electrons and hot holes near the drain region. Some of holes will be injected into the gate oxide due to the vertical field (similar to(V_stress - V_ - Dstress) /T-ox) near the drain and the others will be migrated from drain to source along the channel due to lateral electric field (similar toV_Dstress/L-CH).
URI: http://dx.doi.org/10.1109/55.998868
http://hdl.handle.net/11536/28814
ISSN: 0741-3106
DOI: 10.1109/55.998868
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 23
Issue: 5
起始頁: 255
結束頁: 257
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