標題: Effect of silane flowing time on W volcano and plug formation
作者: Chang, HL
Juang, FL
Kuo, CT
交大名義發表
National Chiao Tung University
關鍵字: W volcano;SiH4;barrier film;W plug;device
公開日期: 1-五月-2002
摘要: W volcano is one of the defects in semiconductor devices. The presence of defects causes metal line bridges and thus device malfunction. The decomposition of SiH4 gas into Si atoms as nucleation sites is crucial for W film deposition. Here, we investigate the phenomenon in which the flowing time of SiH4 gas appears to dominate both W volcano formation and the degree of W film filling in a hole; the density of W volcanoes is increased with an increase of SiH4 flowing time. The volcano-free process and step-coverage of a W plug with various SiH4 flowing times are evaluated, and a formation mechanism is also proposed.
URI: http://dx.doi.org/10.1143/JJAP.41.2906
http://hdl.handle.net/11536/28808
ISSN: 0021-4922
DOI: 10.1143/JJAP.41.2906
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 41
Issue: 5A
起始頁: 2906
結束頁: 2907
顯示於類別:期刊論文


文件中的檔案:

  1. 000176515700023.pdf