標題: Characteristics of polycrystalline silicon thin-film transistors with electrical source/drain extensions induced by a bottom sub-gate
作者: Yu, M
Lin, HC
Chen, GH
Huang, TY
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: poly-Si;thin-film transistor (TFT);field-induced drain;leakage;sub-gate
公開日期: 1-五月-2002
摘要: Characteristics of polycrystalline silicon thin-film transistors (TFT) with source/drain extensions induced by a bottom sub-gate were explored, high on/off current ratio up to 10(7) could be achieved for both n- and p-channel devices. Nevertheless, the performance is significantly degraded by a marked increase of off-state leak-age current when the channel length is scaled below 1 mum. Moreover, a hump in the subthreshold current-voltage regime is observed. After careful analysis, it is found that the leakage current is strongly dependent on the field strength and is not a thermally activated process. A leakage path along the bottom interface of the poly-Si channel layer is proposed to explain these results.
URI: http://dx.doi.org/10.1143/JJAP.41.2815
http://hdl.handle.net/11536/28807
ISSN: 0021-4922
DOI: 10.1143/JJAP.41.2815
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 41
Issue: 5A
起始頁: 2815
結束頁: 2820
顯示於類別:期刊論文


文件中的檔案:

  1. 000176515700005.pdf