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dc.contributor.authorSu, CYen_US
dc.contributor.authorChen, LPen_US
dc.contributor.authorChang, SJen_US
dc.contributor.authorTseng, BMen_US
dc.contributor.authorLin, DCen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorHo, YPen_US
dc.contributor.authorLee, HYen_US
dc.contributor.authorKuan, JFen_US
dc.contributor.authorWen, WYen_US
dc.contributor.authorLiou, Pen_US
dc.contributor.authorChen, CLen_US
dc.contributor.authorLeu, LYen_US
dc.contributor.authorWen, KAen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:42:25Z-
dc.date.available2014-12-08T15:42:25Z-
dc.date.issued2002-05-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0038-1101(01)00130-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/28806-
dc.description.abstractA new automatic parameter extraction method for modeling Of silicon Spiral inductors is presented. The Concepts on self-resonance frequency (f(sr)) and quality factor of a spiral inductor are utilized to develop the concise extraction procedures. In the mean time, the presented extraction procedures are programmed as a macro to execute all the extractions automatically and shorten the extraction time effectively. Without any additional optimization or curve fitting, almost all the patterns of S-parameters between the measured and the simulation of extracted data implemented with the extraction macro are less than 5%. The programmed extraction macro makes it fast and accurate to extract and characterize the behaviours or silicon-based spiral inductors with different structures and substrate resistivities. It provides a concrete foundation commercial silicon radiofrequency (RF) Circuit design to realizing on-chip silicon RF integrated circuits. Furthermore, the directly extracted equivalent model parameters, without an optimization, also provide a rule to fairly, effectively and phsically judge the performance of a spiral inductor. (C) 2002 Elsevier Science Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectspiral inductoren_US
dc.subjectradiofrequency (RF)en_US
dc.subjectprogrammed extraction macroen_US
dc.titleA macro model of silicon spiral inductoren_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0038-1101(01)00130-7en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume46en_US
dc.citation.issue5en_US
dc.citation.spage759en_US
dc.citation.epage767en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000175658000024-
dc.citation.woscount6-
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