標題: A macro model of silicon spiral inductor
作者: Su, CY
Chen, LP
Chang, SJ
Tseng, BM
Lin, DC
Huang, GW
Ho, YP
Lee, HY
Kuan, JF
Wen, WY
Liou, P
Chen, CL
Leu, LY
Wen, KA
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: spiral inductor;radiofrequency (RF);programmed extraction macro
公開日期: 1-五月-2002
摘要: A new automatic parameter extraction method for modeling Of silicon Spiral inductors is presented. The Concepts on self-resonance frequency (f(sr)) and quality factor of a spiral inductor are utilized to develop the concise extraction procedures. In the mean time, the presented extraction procedures are programmed as a macro to execute all the extractions automatically and shorten the extraction time effectively. Without any additional optimization or curve fitting, almost all the patterns of S-parameters between the measured and the simulation of extracted data implemented with the extraction macro are less than 5%. The programmed extraction macro makes it fast and accurate to extract and characterize the behaviours or silicon-based spiral inductors with different structures and substrate resistivities. It provides a concrete foundation commercial silicon radiofrequency (RF) Circuit design to realizing on-chip silicon RF integrated circuits. Furthermore, the directly extracted equivalent model parameters, without an optimization, also provide a rule to fairly, effectively and phsically judge the performance of a spiral inductor. (C) 2002 Elsevier Science Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/S0038-1101(01)00130-7
http://hdl.handle.net/11536/28806
ISSN: 0038-1101
DOI: 10.1016/S0038-1101(01)00130-7
期刊: SOLID-STATE ELECTRONICS
Volume: 46
Issue: 5
起始頁: 759
結束頁: 767
顯示於類別:期刊論文


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  1. 000175658000024.pdf