標題: Optimum design for a thermally stable multifinger power transistor
作者: Liao, CH
Lee, CP
Wang, NL
Lin, B
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: ballasting resistor;coupling current-voltage (I-V) equations;heterojunction bipolar transistor (HBT);multifinger transistor;thermal effect
公開日期: 1-五月-2002
摘要: The thermal stability of multifinger bipolar transistors has been analyzed theoretically. Coupled equations are solved to study the onset of instability and its dependence on the distributions of ballasting resistors. Analytical expressions were derived for the emitter ballasting distribution for optimum stable operation. Compared to conventional methods with uniform ballasting, the optimized design can significantly increase the stable operating current of the transistor. An absolutely stable operating condition is also derived. At this condition, the device never becomes unstable.
URI: http://dx.doi.org/10.1109/16.998601
http://hdl.handle.net/11536/28803
ISSN: 0018-9383
DOI: 10.1109/16.998601
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 49
Issue: 5
起始頁: 902
結束頁: 908
顯示於類別:期刊論文


文件中的檔案:

  1. 000175235300027.pdf