Title: Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence
Authors: Huang, HY
Chuang, CH
Shu, CK
Pan, YC
Lee, WH
Chen, WK
Chen, WH
Lee, MC
Department of Electrophysics
Issue Date: 6-May-2002
Abstract: We have studied optical and electronic properties of isoelectronic P-implanted GaN films grown by metalorganic chemical vapor phase epitaxy. After rapid thermal annealing, a strong emission band around 430 nm was observed, which is attributed to the recombination of exciton bound to isoelectronic P-hole traps. From the Arrhenius plot, the hole binding energy of similar to180 meV and the exciton localization energy of 28 meV were obtained. According to first-principle total-energy calculations, the implantation process likely introduced N(I) and P-related defects. By using photoluminescence excitation technique, we found that the P-implantation-induced localized states not only increase the yellow luminescence but also suppress the transitions from the free carriers to deep levels. (C) 2002 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1476400
ISSN: 0003-6951
DOI: 10.1063/1.1476400
Volume: 80
Issue: 18
Begin Page: 3349
End Page: 3351
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