標題: A silicon nanowire with a Coulomb blockade effect at room temperature
作者: Hu, SF
Wong, WZ
Liu, SS
Wu, YC
Sung, CL
Huang, TY
Yang, TJ
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
公開日期: 17-五月-2002
摘要: An extremely narrow and thin silicon wire has been fabricated on a silicon-on-insulator wafer (see Figure). The room-temperature Coulomb blockade effects as well as the influence of a capacitively coupled gate on the transport properties of this conducting silicon quantum wire are studied. The results obtained are encouraging for the application of such wires in single-electron transistors.
URI: http://hdl.handle.net/11536/28786
http://dx.doi.org/10.1002/1521-4095(20020517)14:10<736
ISSN: 0935-9648
DOI: 10.1002/1521-4095(20020517)14:10<736
期刊: ADVANCED MATERIALS
Volume: 14
Issue: 10
起始頁: 736
結束頁: +
顯示於類別:期刊論文


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  1. 000175933000009.pdf