標題: Enhanced ferroelectric properties of Pb(Zr0.53Ti0.47)O-3 thin films on SrRuO3/Ru/SiO2/Si substrates
作者: Wang, YK
Tseng, TY
Lin, P
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 20-五月-2002
摘要: Highly (110)-oriented Pb(Zr0.53Ti0.47)O-3 (PZT) films were deposited on SrRuO3 (SRO)/Ru/SiO2/Si substrates using a sol-gel method, in which SrRuO3 films were deposited at various substrate temperatures. The crystallinity of the PZT films was improved after the annealing process. The leakage current, dielectric constant, and polarization versus electric-field characteristics of PZT films were strongly dependent on the annealing and deposition temperatures of the SRO films. The 650 degreesC annealed PZT film grown on SRO has a leakage current of 9x10(-7) A/cm(2) at an applied field of 500 kV/cm, dielectric constant of 1306, remanent polarization (P-r) of 40.1 muC/cm(2) and coercive field (E-c) of 78.5 kV/cm at an applied voltage of 5 V. The PZT films indicated fatigue-free characteristics up to similar to1.0x10(12) switching cycles under 5 V bipolar pulse. (C) 2002 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1480099
http://hdl.handle.net/11536/28785
ISSN: 0003-6951
DOI: 10.1063/1.1480099
期刊: APPLIED PHYSICS LETTERS
Volume: 80
Issue: 20
起始頁: 3790
結束頁: 3792
顯示於類別:期刊論文


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