標題: Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films
作者: Tsai, CC
Chang, CS
Chen, TY
光電工程學系
Department of Photonics
公開日期: 20-五月-2002
摘要: In this study, GaN substrates with low-density etch pits were obtained by regrowth on free-standing GaN films (two steps) by hydride vapor-phase epitaxy (HVPE). The etch-pit density was lower than 4x10(4) cm(-2) by atomic-force microscopy. The density is significantly lower than that of the HVPE-grown (one-step) GaN films (HVPE GaN), using sapphire as a substrate. The optical and electrical properties of the two-step HVPE-grown GaN substrates are superior to those of HVPE GaN. Temperature-dependent photoluminescence measurements reveal that thermal quenching behavior of the 2.9 eV band is possibly attributed to a shallow acceptor level at about 118+/-5 meV above the valence band. (C) 2002 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1480108
http://hdl.handle.net/11536/28783
ISSN: 0003-6951
DOI: 10.1063/1.1480108
期刊: APPLIED PHYSICS LETTERS
Volume: 80
Issue: 20
起始頁: 3718
結束頁: 3720
顯示於類別:期刊論文


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