標題: Synthesis of bulk beta-FeSi2 crystal
作者: Hsu, YK
Wang, JJ
Chang, CS
Wang, SC
光電工程學系
Department of Photonics
關鍵字: beta-FeSi2;Bridgmann growth;thermoelectric power
公開日期: 1-六月-2002
摘要: The feasibility of adopting two methods to synthesizing the bulk crystal of beta-FeSi2, was examined: one involving two-step Bridgmann growth with a three-zone furnace and another invoking melting growth with a single zone furnace, As-grown iron disilicides were annealed in the furnaces at different temperatures for various durations, Experimental result,; indicate that a larger beta-FeSi, crystal can be obtained using the two-step fast Bridgmann growth method kith post-annealing at 1073 K for 300h. Fast cooling and adding some copper impurities to the raw materials were found to promote the growth of beta-FeSi2. The iron disilicide crystal. with a large contribution from the 8 phase, supported a higher thermoelectric power. A thermoelectric power of 450 muV/K was obtained at 300-900 K for the sample with copper doping The energy hand gap of beta-FeSi2 samples was about 0.82-0.88 eV. determined by measuring the temperature-dependent resistivity.
URI: http://dx.doi.org/10.1143/JJAP.41.3854
http://hdl.handle.net/11536/28773
ISSN: 0021-4922
DOI: 10.1143/JJAP.41.3854
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 41
Issue: 6A
起始頁: 3854
結束頁: 3859
顯示於類別:期刊論文


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