標題: Deep electron trapping centers in Te-doped (AlxGa1-x)(0.5)In0.5P (x=0.5) layers grown by metal-organic chemical vapor deposition
作者: Sung, WJ
Huang, KF
Tseng, TY
電子物理學系
Department of Electrophysics
關鍵字: AlGaInP;Te;defect;deep level;donor-related defect;DLTS
公開日期: 1-六月-2002
摘要: The properties of deep electron trapping centers of Te-doped (AlxGa1-x)(0.5)In0.5P (x = 0.5) layers grown by metal-organic chemical vapor deposition (MOCVD) are studied by using deep level transient spectroscopy (DLTS) technique. One distinct deep electron trap located at 0.165 +/- 0.01 eV is observed and found to increase as elevating Te-dopant concentration in (AlxGa1-x)(0.5)In0.5P (,v = 0.5) materials, indicating that this deep electron trap is a donor-related defect and has the similar characters as deep levels observed in Si- and Se-doped (AlxGa1-x)(0.5)In0.5P.
URI: http://dx.doi.org/10.1143/JJAP.41.3671
http://hdl.handle.net/11536/28771
ISSN: 0021-4922
DOI: 10.1143/JJAP.41.3671
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 41
Issue: 6A
起始頁: 3671
結束頁: 3672
顯示於類別:期刊論文


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  1. 000177169500011.pdf