標題: Thin oxides grown on disilane-based polysilicon
作者: Lee, JW
Lei, TF
Lee, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: disilane polysilicon;thin interpoly oxide;interface roughness;thermally oxidation;reliability
公開日期: 1-六月-2002
摘要: This report describes the thin oxide (<10 nm) thermally grown on polysilicon film, which was prepared by disilane (Si2H6) chemical vapor deposition. In comparison with the thin oxide grown on conventional silane (SiH4) polysilicon film, the prepared oxides have lower leakage current,;. a lower electron trapping rate and a larger charge to breakdown distribution. These good properties are attributed to the smooth surface of the disilane poly-I film. This film is suitable for use as the interpoly oxide of electrically-erasable programmable read only memory.
URI: http://dx.doi.org/10.1143/JJAP.41.3651
http://hdl.handle.net/11536/28770
ISSN: 0021-4922
DOI: 10.1143/JJAP.41.3651
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 41
Issue: 6A
起始頁: 3651
結束頁: 3654
顯示於類別:期刊論文