Title: Thin oxides grown on disilane-based polysilicon
Authors: Lee, JW
Lei, TF
Lee, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: disilane polysilicon;thin interpoly oxide;interface roughness;thermally oxidation;reliability
Issue Date: 1-Jun-2002
Abstract: This report describes the thin oxide (<10 nm) thermally grown on polysilicon film, which was prepared by disilane (Si2H6) chemical vapor deposition. In comparison with the thin oxide grown on conventional silane (SiH4) polysilicon film, the prepared oxides have lower leakage current,;. a lower electron trapping rate and a larger charge to breakdown distribution. These good properties are attributed to the smooth surface of the disilane poly-I film. This film is suitable for use as the interpoly oxide of electrically-erasable programmable read only memory.
URI: http://dx.doi.org/10.1143/JJAP.41.3651
http://hdl.handle.net/11536/28770
ISSN: 0021-4922
DOI: 10.1143/JJAP.41.3651
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 41
Issue: 6A
Begin Page: 3651
End Page: 3654
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