標題: HYDROGENATED AMORPHOUS-SILICON CARBIDE DOUBLE GRADED-GAP P-I-N THIN-FILM LIGHT-EMITTING-DIODES
作者: SHIN, NF
CHEN, JY
JEN, TS
HONG, JW
CHANG, CY
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-九月-1993
摘要: Hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLED's) with graded p+-i and i-n+ junctions have been proposed and fabricated successfully on an indium-tin-oxide (ITO)-coated glass. An obtained orange TFLED reveals a brightness of 207 cd/m2 at an injection current density of 600 mA/cm2, which is the brightest one ever reported for a-SiC:H TFLED's at the same injection current density. This significant increase of brightness could be ascribed to the combined effect of reduced interface states by using the graded-gap junctions, lower contact resistance due to post-metallization annealing, and higher optical gaps of the doped layers.
URI: http://dx.doi.org/10.1109/55.244709
http://hdl.handle.net/11536/2877
ISSN: 0741-3106
DOI: 10.1109/55.244709
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 14
Issue: 9
起始頁: 453
結束頁: 455
顯示於類別:期刊論文


文件中的檔案:

  1. A1993LU16600010.pdf