標題: Transport properties of CrO2 (110) films grown on TiO2 buffered Si substrates by chemical vapor deposition
作者: Liu, SJ
Juang, JY
Wu, KH
Uen, TM
Gou, YS
Lin, JY
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
公開日期: 3-六月-2002
摘要: Epitaxial CrO2 (110)-oriented films were fabricated on Si (100) substrates buffered by rutile TiO2 derived from oxidation of a pulsed-laser-deposited TiN layer. The epitaxial films of CrO2 were prepared by chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO3 precursor. The transport measurements show that the CrO2 films are metallic with a Curie temperature of about 380 K. The temperature dependence of resistivity was best described by a phenomenological expression rho(T)=rho(0)+AT(2)e((-Delta/T)) over the range of 5-350 K with Delta=94 K. The magnetic measurements show the in-plane coercive fields are about 30 and 60 Oe at 300 and 5 K, respectively. The temperature dependent spontaneous magnetization follows Bloch's T-3/2 law and the slope suggests a critical wavelength of lambda(Delta)similar to 30.6 A beyond which spin-flip scattering becomes important. (C) 2002 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1481534
http://hdl.handle.net/11536/28728
ISSN: 0003-6951
DOI: 10.1063/1.1481534
期刊: APPLIED PHYSICS LETTERS
Volume: 80
Issue: 22
起始頁: 4202
結束頁: 4204
顯示於類別:期刊論文


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