標題: Silicon nanostructures fabricated by scanning probe oxidation and tetra-methyl ammonium hydroxide etching
作者: Chien, FSS
Hsieh, WF
Gwo, S
Vladar, AE
Dagata, JA
光電工程學系
Department of Photonics
公開日期: 15-六月-2002
摘要: Fabrication of silicon nanostructures is a key technique for the development of monolithically integrated optoelectronic circuits. We demonstrated that the process of scanning probe microscope (SPM) oxidation and anisotropic tetra-methyl ammonium hydroxide (TMAH) etching is a low-cost and reliable method to produce smooth and uniform silicon nanostructures on a variety of silicon substrates. Etched structures with a pitch of 100 nm, positive- and negative-contrast structures, and features height greater than 100 nm have been produced on bare silicon, and Si3N4-coated and silicon-on-insulator wafers. Evolution of hexagonal pits on two-dimensional grid structures were shown to depend on the pattern spacing and orientation with respect to Si(110) crystal directions. We successfully combined SPM oxidation with traditional optical lithography in a mixed, multilevel patterning method for realizing micrometer-and nanometer-scale feature sizes, as required for photonic device designs. The combination of SPM oxidation and TMAH etching is a promising approach to rapid prototyping of functional nano-photonic devices. (C) 2002 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1476072
http://hdl.handle.net/11536/28718
ISSN: 0021-8979
DOI: 10.1063/1.1476072
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 91
Issue: 12
起始頁: 10044
結束頁: 10050
顯示於類別:期刊論文


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