標題: Forming silicon carbon nitride crystals and silicon carbon nitride nanotubes by microwave plasma-enhanced chemical vapor deposition
作者: Chang, HL
Hsu, CM
Kuo, CT
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 17-Jun-2002
摘要: Catalyst-assisted silicon carbon nitride (SiCN) nanotubes and SiCN crystals are prepared. The SiCN nanotubes and SiCN crystals are formed by gaseous sources of CH4/N-2/H-2 and CH4/N-2, respectively, and using solid Si columns arranged symmetrically around the specimen as additional Si sources. The formation of the tubular structure is related to the ambient of process that includes H-2 gas, which is considered to delay the action of the so-called catalyst poisons and keep the tube end open during growth. Analysis shows that the SiCN crystals exhibit tetragonal or hexagonal shapes with sizes of about several microns, and multibonding structures. In contrast, the SiCN tubes are randomly orientated with various diameters, and graphitelike structure. The growth mechanisms of SiCN crystals and SiCN nanotubes are discussed. (C) 2002 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1487925
http://hdl.handle.net/11536/28715
ISSN: 0003-6951
DOI: 10.1063/1.1487925
期刊: APPLIED PHYSICS LETTERS
Volume: 80
Issue: 24
起始頁: 4638
結束頁: 4640
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