標題: Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors
作者: Peng, DZ
Chang, TC
Zan, HW
Huang, TY
Chang, CY
Liu, PT
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 24-六月-2002
摘要: In this letter, the characteristics and reliability of laser-activated polycrystalline silicon thin-film transistors (poly-Si TFTs) have been investigated by stressing the devices under V-ds=12 V and V-gs=15 V. In comparison with traditional furnace-activated poly-Si TFTs, the leakage current is relatively large for laser-activated poly-Si TFTs. Further, while the degradation rates of threshold voltage and subthreshold swing are comparable to those of traditional furnace-activated TFTs, the post-stress leakage and on/off current ratio for laser-activated poly-Si TFTs degrade much faster than those of furnace-activated counterparts. The laser activation modifies the grain structure between the drain and the channel region, and causes grain discontinuity extending from the drain to the channel region. As a result, an inferior reliability with extra trap state density and larger leakage current was observed in the laser-activated poly-Si TFTs. (C) 2002 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1489096
http://hdl.handle.net/11536/28713
ISSN: 0003-6951
DOI: 10.1063/1.1489096
期刊: APPLIED PHYSICS LETTERS
Volume: 80
Issue: 25
起始頁: 4780
結束頁: 4782
顯示於類別:期刊論文


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  1. 000176275400032.pdf