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dc.contributor.authorLo, CLen_US
dc.contributor.authorDuh, JGen_US
dc.contributor.authorChiou, BSen_US
dc.date.accessioned2014-12-08T15:42:16Z-
dc.date.available2014-12-08T15:42:16Z-
dc.date.issued2002-07-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1482770en_US
dc.identifier.urihttp://hdl.handle.net/11536/28696-
dc.description.abstractY2O2S: Eu phosphors doped with different concentrations of Eu were fabricated by a high-temperature flux fusion method. For applications in field emission displays, phosphor powders were electrophoretically deposited on an indium-tin oxide coated glass substrate to form a phosphor screen. Cathodoluminescence properties of phosphor screens were examined at a low excitation voltage of 5 kV in a high-vacuum chamber (5 x 10(-8) Torr), and characteristics of Y2O2S: Eu phosphors, including brightness and wavelength data, are presented and discussed. The red emission brightness for the Y2O2S: Eu phosphor screens can be significantly improved by adjustment of the Eu additions, which decrease the x coordinate slightly, while having no significant influence on the color performance. Considering the effects of Eu concentrations on red light emission spectra and brightness for Y2O2S: Eu phosphor screens, it is found that brightness for Y2O2S: Eu phosphor screens could be obtained up to 120 cd/m(2) with chromaticity of x = 0.63 and y = 0.36, and the Eu dopant concentration is suggested to be in the range 6-7.5 wt %. (C) 2002 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleLow-voltage cathodoluminescence properties of the Y2O2S : Eu red light emitting phosphor screen in field-emission environmentsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1482770en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume149en_US
dc.citation.issue7en_US
dc.citation.spageH129en_US
dc.citation.epageH133en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000176251600061-
dc.citation.woscount9-
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