標題: A NEW APPROACH TO DETERMINE THE DRAIN-AND-SOURCE SERIES RESISTANCE OF LDD MOSFETS
作者: CHUNG, SSS
LEE, JS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Sep-1993
摘要: A new method for determining the intrinsic drain-and-source series resistance and the effective channel length of LDD MOSFET's is proposed. The method is based on the experimentally measured device I-V characteristics and a new parameter extraction procedure. A consistent set of the effective channel length and the gate-voltage-dependent drain-and-source series resistance was thus determined. The comparison between the measured and experimental drain current characteristics shows excellent agreement using the present model values.
URI: http://dx.doi.org/10.1109/16.231580
http://hdl.handle.net/11536/2869
ISSN: 0018-9383
DOI: 10.1109/16.231580
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 40
Issue: 9
起始頁: 1709
結束頁: 1711
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  1. A1993LU39400021.pdf