標題: Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment
作者: Chang, TC
Liu, PT
Mor, YS
Tsai, TM
Chen, CW
Mei, YJ
Pan, FM
Wu, WF
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-2002
摘要: The interaction between low-k organosilicate glass (OSG) and photoresist removal is investigated. O-2 plasma ashing and chemical wet stripper are commonly performed to remove photoresist (PR) in integrated circuit fabrication. However, O-2 plasma or wet stripper will attack function groups and cause Si-OH group formation in OSG film during PR removal processing. The Si-OH groups often lead to moisture uptake and consequently dielectric degradation will occur in OSG film. Trimethylchlorosilane (TMCS) treatment can negate the damage in the OSG film after the PR removal process. In addition, chemical TMCS can react with Si-OH groups and reduces moisture uptake so that the dielectric characteristic of OSG can be maintained. Hence, TMCS treatment is a promising method for photoresist removal. (C) 2002 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.1495876
http://hdl.handle.net/11536/28689
ISSN: 1071-1023
DOI: 10.1116/1.1495876
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 20
Issue: 4
起始頁: 1561
結束頁: 1566
顯示於類別:期刊論文


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  1. 000177510500048.pdf