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dc.contributor.authorMor, YSen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorLiu, PTen_US
dc.contributor.authorTsai, TMen_US
dc.contributor.authorChen, CWen_US
dc.contributor.authorYan, STen_US
dc.contributor.authorChu, CJen_US
dc.contributor.authorWu, WFen_US
dc.contributor.authorPan, FMen_US
dc.contributor.authorLur, Wen_US
dc.contributor.authorSze, SMen_US
dc.date.accessioned2014-12-08T15:42:14Z-
dc.date.available2014-12-08T15:42:14Z-
dc.date.issued2002-07-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.1488645en_US
dc.identifier.urihttp://hdl.handle.net/11536/28686-
dc.description.abstractO-2 plasma ashing is commonly used to remove photoresist. The effect of O-2 plasma ashing on the porous organosilicate glass (CH3SiO1.5)(n), one of the spin-on materials, is investigated. O2 plasma can oxidize the methyl groups in porous organosilicate glass (POSG), which leads to the formation of Si-OH groups. The hydrophilic Si-OH groups will induce moisture uptake so that electrical degradation will occur in POSG film. Pure hexamethyldisilazane (HMDS) vapor (100% HMDS) can react with the Si-OH groups in POSG film. It converts hydrophilic Si-OH groups into hydrophobic Si-O-Si(CH3)(3) groups against moisture uptake. The leakage current density decreases by a factor of 2-3 and the dielectric constant decreases from 3.62 to 2.4 when O-2 plasma-damaged POSG undergoes HMDS treatment at 80degreesC for 15 min. Therefore, HMDS treatment is the effective technique to repair the electrical degradation to POSG film during photoresist stripping processing. (C) 2002 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleEffective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatmenten_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.1488645en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume20en_US
dc.citation.issue4en_US
dc.citation.spage1334en_US
dc.citation.epage1338en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000177510500009-
dc.citation.woscount57-
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