標題: Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatment
作者: Mor, YS
Chang, TC
Liu, PT
Tsai, TM
Chen, CW
Yan, ST
Chu, CJ
Wu, WF
Pan, FM
Lur, W
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-2002
摘要: O-2 plasma ashing is commonly used to remove photoresist. The effect of O-2 plasma ashing on the porous organosilicate glass (CH3SiO1.5)(n), one of the spin-on materials, is investigated. O2 plasma can oxidize the methyl groups in porous organosilicate glass (POSG), which leads to the formation of Si-OH groups. The hydrophilic Si-OH groups will induce moisture uptake so that electrical degradation will occur in POSG film. Pure hexamethyldisilazane (HMDS) vapor (100% HMDS) can react with the Si-OH groups in POSG film. It converts hydrophilic Si-OH groups into hydrophobic Si-O-Si(CH3)(3) groups against moisture uptake. The leakage current density decreases by a factor of 2-3 and the dielectric constant decreases from 3.62 to 2.4 when O-2 plasma-damaged POSG undergoes HMDS treatment at 80degreesC for 15 min. Therefore, HMDS treatment is the effective technique to repair the electrical degradation to POSG film during photoresist stripping processing. (C) 2002 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.1488645
http://hdl.handle.net/11536/28686
ISSN: 1071-1023
DOI: 10.1116/1.1488645
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 20
Issue: 4
起始頁: 1334
結束頁: 1338
顯示於類別:期刊論文


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